Place of Origin : Zhejiang,China
Features Of 2SC3058
NPN bipolar junction transistor
High power RF transistor, commonly used in RF power amplifier circuits for mobile phones
High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency
Rated for a maximum collector-emitter voltage (VCEO) of 75V and a maximum collector current (IC) of 800mA
Features Of 2SC3058
NPN Bipolar Junction Transistor
High Power RF Transistor, Commonly Used In RF Power Amplifier Circuits For Mobile Phones
High Back Pressure Triode Designed To Operate With High Levels Of Back Pressure, Resulting In Higher Power Output And Efficiency
Rated For A Maximum Collector-emitter Voltage (VCEO) Of 75V And A Maximum Collector Current (IC) Of 800mA
Low-level Input Impedance And High-current Gain
Fast Switching Speed And High-frequency Response
TO-220 Package
Suitable For Use In A Wide Range Of RF Power Amplifier Applications, Such As Mobile Phones, Wireless Communication Devices, And Other Wireless Applications.
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