N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board - Product

Other Specification : N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board 30V N-Channel PowerTrench FDS6676AS Electronic Components Original Stock General Description The FDS6676AS Is Designed To Replace A Single SO-8 MOSFET And Schottky Diode In Synchronous DC:DC Power Supplies. This 30V MOSFET Is Designed To Maximize Power Conversion Efficiency, Providing A Low RDS(ON) And Low Gate Charge. The FDS6676AS Includes An Integrated Schottky Diode Using Fairchilds Monolithic SyncFET Technology. Applications DC/DC Converter Low Side Notebook Features 14.5 A, 30 V. RDS(ON) Max= 6.0 M @ VGS = 10 V RDS(ON) Max= 7.25 M @ VGS = 4.5 V Includes SyncFET Schottky Body Diode Low Gate Charge (45nC Typical) High Performance Trench Technology For Extremely Low RDS(ON) And Fast Switching High Power And Current Handling Capability Absolute Maximum Ratings TA=25o C Unless Otherwise Noted - - - - Symbol | Parameter | Rating | Unit | VDSS | Drain-Source Voltage | 30 | V | VGSS | Gate-Source Voltage | 20 | V | ID | Drain Current Continuous (Note 1a) Pulsed | 14.5 | A | 50 | PD | Power Dissipation For Single Operation (Note 1a) (Note 1b) (Note 1c) | 2.5 | W | 1.5 | 1 | TJ, TSTG | Operating And Storage Junction Temperature Range | 55 To +150 | C | - - - - Thermal Characteristics - - - - RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 50 | W/C | RJC | Thermal Resistance, Junction-to-Case (Note 1) | 25 | - - - - Package Marking And Ordering Information - - - - Device Marking | Device | Reel Size | Tape Width | Quantity | FDS6676AS | FDS6676AS | 13 | 12MM | 2500 Units | FDS6676AS | FDS6676AS_NL | 13 | 12MM | 2500 Units | - - - -

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