Place of Origin : Zhejiang,China
Features Of 2SC3550
NPN bipolar junction transistor
High-power RF transistor designed for use in RF power amplifier circuits
High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency
Features Of 2SC3550
NPN Bipolar Junction Transistor
High-power RF Transistor Designed For Use In RF Power Amplifier Circuits
High Back Pressure Triode Designed To Operate With High Levels Of Back Pressure, Resulting In Higher Power Output And Efficiency
Rated For A Maximum Collector-emitter Voltage (VCEO) Of 60V And A Maximum Collector Current (IC) Of 15A
High Current Gain With Low Input Impedance, Making It Suitable For Use In Amplifier Circuits
Fast Switching Speed And High-frequency Response, With A Typical Cutoff Frequency Of 500MHz
TO-220 Package
Suitable For Use In High-power RF Amplifier Circuits In Applications Such As Wireless Communication, Broadcasting, And Radar Systems, Among Others.
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